Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2006-08-01

2006-08-01

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S197000, C257S198000, C257S566000, C257S592000

Reexamination Certificate

active

07084484

ABSTRACT:
A semiconductor integrated circuit including a plurality of bipolar transistors that are produced by forming, in a plurality of transistor-producing regions, a first conductive type emitter layer on the front surface side of a second conductive type base layer that is formed on the surface side of a first conductive collector layer and contains germanium, the first conductive type emitter layer being formed from a semiconductor material having a band gap larger than the base layer. The concentrations of impurities contained in the emitter layers vary among the plurality of transistor-producing regions, and the germanium concentrations differ in the base-emitter junction interfaces of at least two of the transistor-producing regions, such that the ON-state voltages required for turning the plurality of bipolar transistors into an ON state differ from each other. This semiconductor integrated circuit makes it possible to reduce power consumption while maintaining the excellent performance of a bipolar transistor.

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