Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2005-11-22

2005-11-22

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S210000, C257S525000, C257S526000, C257S539000, C257S552000, C257S565000

Reexamination Certificate

active

06967406

ABSTRACT:
A layout method of a semiconductor integrated circuit is provided which improves characteristics of the circuit by giving hierarchical structure of interconnections regularity. A pair of emitter followers is disposed symmetrically with respect to a center line of a differential amplifier. Thus, interconnections within a circuit block and a ground wiring can be made with a single metal layer, since an area where the interconnections cross with each other is eliminated. Herewith cross talk due to the intersection of the interconnections can be resolved. Also, the interconnections between the differential amplifier and the emitter follower circuits can be made equal in length. It is possible to assign a second metal layer to interconnections between circuit blocks and a third metal layer to a power supply so that characteristics of the semiconductor integrated circuit are improved.

REFERENCES:
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patent: 5896051 (1999-04-01), Umeda et al.
patent: 5923059 (1999-07-01), Gheewala
patent: 6559718 (2003-05-01), Kudo et al.
patent: 05075438 (1993-03-01), None
patent: 1997-0003938 (1997-01-01), None
patent: 2001-0020833 (2001-03-01), None
Weste et al. “Principles of CMOS VLSI Design”, 1985, pp. 349-351.

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