Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-03-01
2005-03-01
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S365000
Reexamination Certificate
active
06861724
ABSTRACT:
The invention provides an integrated circuit that permits input of a signal of a potential which is higher than a power supply voltage supplied to an interface circuit and also higher than a maximum rated voltage allowable for a gate electrode of a transistor forming an interface circuit, even in a non-access mode. The invention can include a gate voltage control circuit that produces a gate voltage to be applied to a gate electrode of a transfer gate which is connected between an external input terminal and an input end of an input buffer and transmits an external signal input from the external input terminal to the input end of the input buffer. The gate voltage control circuit outputs, as the gate voltage, a voltage produced based on a relatively high first voltage to be applied as a power supply voltage of a semiconductor integrated circuit in the access mode while outputting, as the gate voltage, a voltage produced based on a relatively low second voltage to be applied as a power supply voltage of the semiconductor integrated circuit in the non-access mode.
REFERENCES:
patent: 5657292 (1997-08-01), McClure
patent: 5847432 (1998-12-01), Nozaki
patent: 20030117171 (2003-06-01), Uno
Cao Phat X.
Oliff & Berridg,e PLC
Seiko Epson Corporation
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