Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2005-01-25

2005-01-25

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S690000, C257S691000, C455S142000

Reexamination Certificate

active

06847108

ABSTRACT:
A pin layout which prevents degradation of a frequency characteristic of a low noise amplifier and a receiving mixer included in a semiconductor integrated circuit for dual-band transmission/reception wherein the circuit of the low noise amplifier is provided at a position where the distance from the end of a pin outside the package of the low noise amplifier to the pad is the shortest; ground pins of two low noise amplifiers and the high frequency signal pins are arranged respectively so as not to be adjacent to each other; the power source and ground pin of the low noise amplifier, and the power source and ground pin of the bias circuit are respectively separated; and high frequency signal wires do not intersect each other.

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Fong, K.L., “Dual-Band High-Linearity Variable-Gain Low-Noise Amplifiers for Wireless Applications”, ISSCC 1999, pp. 224-225, p. 463 (TP13.3, 24 pgs.).
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