Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-01-24
1999-03-02
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257 72, 257351, H01L 2976, H01L 27108, H01L 27104, H01L 2701
Patent
active
058775137
ABSTRACT:
The absolute value of the threshold voltage of a P-channel TFT is reduced by making its channel length shorter than that of an N-channel TFT by at least 20%, to thereby approximately equalize the threshold voltage absolute values of those TFTs.
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Koyama Jun
Takemura Yasuhiko
Fahmy Wael
Ferguson Jr. Gerald J.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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