Semiconductor integrated circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

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Details

327314, 327389, 326 23, H03K 508, H03K 1716

Patent

active

055259332

ABSTRACT:
A semiconductor integrated circuit comprises a signal input terminal, a power supply voltage terminal to which a power voltage is applied, a reference voltage terminal to which a ground voltage is applied, a first PMOS transistor having a drain, a gate connected to the signal input terminal, and a source connected to the power supply voltage terminal, a second PMOS transistor having a gate and a drain being mutually connected to each other, and a source connected to the drain of the first transistor, a third PMOS transistor having a gate connected to the drain of the second transistor, a source connected to the power supply potential terminal, and a drain connected to the drain of the first transistor, an NMOS transistor having a gate connected to the power supply voltage terminal, a drain connected to the drain of the second PMOS transistor, and a source connected to the reference voltage terminal, an internal circuit connected to the drain of the NMOS transistor, a first overvoltage absorption element, connected between the reference voltage terminal and the signal input terminal, for absorbing an overvoltage applied to the signal input terminal, and a second overvoltage absorption element, connected between the signal input terminal and the power supply voltage terminal, for absorbing an overvoltage applied to the signal input terminal.

REFERENCES:
patent: 4617482 (1986-10-01), Matsuda
patent: 5138190 (1992-08-01), Yamazaki et al.
patent: 5175445 (1992-12-01), Kinugasa et al.
patent: 5239207 (1993-08-01), Miyamoto et al.
patent: 5247213 (1993-09-01), Trinh et al.
patent: 5386153 (1995-01-01), Voss et al.
patent: 5399960 (1995-03-01), Gross
patent: 5432463 (1995-07-01), Wong et al.

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