Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-08-23
2011-08-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185040
Reexamination Certificate
active
08004894
ABSTRACT:
In the semiconductor integrated circuit incorporating non-volatile memory that is not electrically rewritable, updating stored data and reusing the non-volatile memory are made possible. The data stored in the non-volatile memory can be updated and the non-volatile memory can be reused by dividing the non-volatile memory into a plurality of blocks and replacing a used block with an unused block. When data “1” is set in the first flag of a certain block, a block selection circuit judges that data is already written in the block and rewriting new data into the block is not possible. To update the stored data, the updated data is written into a block that is selected by the block selection circuit out of the rest of the blocks. At that time, the first flag of the block is set to data “1”. Stored data is updated one after another as described above. When data of final update is written into a certain block, the second flag of the block is set to data “1”.
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King Douglas
Morrison & Foerster / LLP
Phung Anh
Sanyo Electric Co,. Ltd.
Sanyo Semiconductor Co. Ltd.
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