Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1979-05-15

1982-07-20

La Roche, Eugene R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307317A, 357 43, 357 92, H03K 19091, H01L 2704

Patent

active

043408273

ABSTRACT:
A Schottky diode is connected between the collector and the base of a common-base bipolar transistor to form a by-pass of the output current. The output current of this composite three-terminal structure becomes rapidly low when the voltage across the transistor is reduced below a threshold value. This three-terminal structure can be formed in a simple integrated structure and is particularly suited for driving a unipolar transistor of high input impedance, e.g. for use as the injector of an integrated injection logic. The bipolar transistor may also be substituted by a field effect transistor to constitute a three-terminal structure of similar characteristics.

REFERENCES:
patent: 3699362 (1972-10-01), Jordan
patent: 4009397 (1977-02-01), Mulder et al.
patent: 4064405 (1977-12-01), Cricchi et al.
patent: 4115793 (1978-09-01), Nishizawa
patent: 4121116 (1978-10-01), Ngutung
patent: 4160918 (1979-07-01), Nazarian et al.
patent: 4198648 (1980-04-01), Nishizawa
patent: 4243895 (1981-01-01), Nazarian et al.

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