Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1997-10-09

1999-05-11

Lam, Tuan T.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

333 81R, H01P1/22

Patent

active

059031786

ABSTRACT:
A drain and a source of a field-effect transistor are connected to first and second signal terminals, respectively. A first control terminal is connected to a gate. A first resistor is interposed between the gate and the first control terminal. Capacitors are interposed between the source/drain and the first and second signal terminals, respectively. A control terminal is connected to at least one of the source/drain via a second resistor. High frequency signals supplied through the first signal terminal is sent through the field-effect transistor and outputted through the second signal terminal, and a quantity of the transmitted high frequency signals is controlled by a control voltage signal applied across the first and second control terminals. This structure provides a high frequency semiconductor integrated circuits which reduces a power consumption and an occupied area, increases a switchable power, suppresses output distortion, and simplifies a peripheral circuit.

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patent: 5350957 (1994-09-01), Cooper et al.
patent: 5461265 (1995-10-01), Kunishisa et al.
patent: 5517150 (1996-05-01), Okumura

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