1987-07-14
1989-08-22
James, Andrew J.
357 14, 357 20, 357 52, H01L 2702, H01L 2992, H01L 2906
Patent
active
048600830
ABSTRACT:
In a semiconductor IC, a diode and a resistor for surge protection are integratedly formed in a p-type common island region laterally isolated from a p-type epitaxial layer by oxide film, by forming an n-type region of high impurity concentration to reach down to an n-type buried region and a resistor region, respectively; the IC has higher integration and larger junction area of the diode, and achieve better surge protection.
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James Andrew J.
Matsushita Electronics Corporation
Ngo Ngan Van
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