Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1991-04-02

1997-08-26

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

438324, 438357, H01L 21265, H01L 2170, H01L 2700

Patent

active

056610661

ABSTRACT:
In an integrated circuit comprising an IIL and a high frequency npn bipolar transistor which has a deep p.sup.- -type base region 45 for its inverted npn output transistors, circuit elements such as a resistor part R, a capacitor part C, a diode part D and an isolated crossing connection part Cr are provided with deep p.sup.- -type regions 54, 54', 65', 71 and 82 which are formed at the same time with the p.sup.- -type region 45 in the IIL, and thereby, reliability of the circuit elements as well as characteristic thereof are improved, thereby further improving manufacturing yields.

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