Amplifiers – With semiconductor amplifying device – Including push-pull amplifier
Patent
1978-05-04
1981-01-27
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including push-pull amplifier
330307, H03F 3185, H03F 3187
Patent
active
042478260
ABSTRACT:
A semiconductor integrated amplifier having a p-channel type MISFET and an n-channel type MISFET which are integrated in a single semiconductor substrate, a load resistance connected between the drain regions of the MISFETs, a power source to which the MISFETs are connected in series, and a DC current blocking capacitor through which the gates of the MISFETs are connected to each other. The amplifier has a gate capacitance one terminal of which is constituted by a well formed in the substrate and connected to high voltage side of power supply, while the other electrode thereof is constituted by a gate electrode formed on the well and connected to the low voltage side of the power supply. Parasitic capacitance of the capacitor is considerably reduced to allow a wider range of frequency adjustment of the amplifier.
REFERENCES:
patent: 3886458 (1975-05-01), Matsumoto et al.
patent: 4100502 (1978-07-01), Yamashiro
Gappa Takeshi
Yamashiro Osamu
Hitachi , Ltd.
Mullins James B.
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