Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1992-01-29
1993-09-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 94, 257192, 257194, 257290, 257462, H01L 3112
Patent
active
052471934
ABSTRACT:
A semiconductor device serving as a semiconductor light-emitting element, a semiconductor light-receiving element, or a transistor, includes a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a second semiconductor layer of a second conductivity type formed on the other surface of the first semiconductor layer, source and drain regions formed in a surface region of the second semiconductor layer, source and drain electrodes respectively formed on the source and drain regions, an insulating layer formed on the second semiconductor layer between the source and drain regions, and a gate electrode formed on the insulating layer.
REFERENCES:
patent: 4496964 (1985-01-01), Tsubovichi et al.
patent: 4531743 (1985-07-01), Maserjian
patent: 5101246 (1992-03-01), Onodera
patent: 5101253 (1992-03-01), Mizutani et al.
Moustakas et al., "Optical Switching in Metal Tunnel-Insulator N-p.sup.+ Silicon Devices," Solid-State and Electron Devices, Jul. 1979, vol. 3, No. 4, pp. 85-93.
Mintel William
Olympus Optical Co,. Ltd.
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