Semiconductor input protection circuit

Details Semiconductor input protection circuit Semiconductor input protection circuit

2006-07-11

2006-07-11

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257S362000, C257S363000

Reexamination Certificate

active

07075123

ABSTRACT:
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1is formed. In the transistor NB, a diode D3is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.

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