Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1993-03-30
1994-09-13
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257207, 257357, H01L 2710
Patent
active
053471504
ABSTRACT:
In an integrated circuit device using a plurality of different power supply voltages, the application of an input voltage exceeding the power supply voltages to an input/output circuit is prevented. When a p-type substrate is used, a plurality n-wells are formed to surround an integrated circuit region on a central portion of the substrate. When an n-type substrate is used, a plurality of p-wells are formed in the same manner. A predetermined power supply voltage is applied to each well to select transistors of the input/output buffer in accordance with the voltage level of an external voltage.
REFERENCES:
patent: 3916430 (1975-10-01), Heuner et al.
patent: 4853757 (1989-08-01), Kuramitsu et al.
patent: 4992845 (1991-02-01), Arakawa et al.
JDEC Standard No. 8-1, "Interface Standard for Low Voltage TTL-Compatible (LVTTL) VLSI Digital Circuits," Dec. 1984.
Mori Toshiaki
Sakai Izumi
Tanaka Yasunori
Uchino Yukinori
Kabushiki Kaisha Toshiba
Limanek Robert
LandOfFree
Semiconductor input/output circuits operating at different power does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor input/output circuits operating at different power, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor input/output circuits operating at different power will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1122374