Semiconductor injection laser having a movable laser beam

Details Semiconductor injection laser having a movable laser beam Semiconductor injection laser having a movable laser beam

1979-01-26

1981-10-20

Davie, James W.

Oscillators

Molecular or particle resonant type

331 945K, H01S 319

Patent

active

042963869

ABSTRACT:
A semiconductor injection laser includes two contact regions on two oppositely-located major surfaces of the semiconductor body. One of these contact regions is divided into two sub-contact regions which are separated by a gap, and the active zone of the laser can be moved in a direction transverse to that of the laser beam by controlling the current distribution between the two sub-contact regions in order to move the laser beam.

REFERENCES:
patent: 3340479 (1967-09-01), Ashkin
patent: 3402366 (1968-09-01), Williams et al.
patent: 3701044 (1972-10-01), Paoli et al.
patent: 3702975 (1972-11-01), Miller
patent: 4161701 (1979-07-01), Takeda et al.
D. Scifres et al., "Beam Scanning with Twin-Stripe Injection Laser", Appl. Phys. Lett., vol. 33, No. 8, Oct. 15, 1978, pp. 702-704.

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