Semiconductor injection laser device

Details Semiconductor injection laser device Semiconductor injection laser device

1978-03-29

1979-08-28

Edlow, Martin H.

Oscillators

Relaxation oscillators

357 17, 331 945H, H01L 3319

Patent

active

041662784

ABSTRACT:
N type CaAlAs, GaAs and GaAlAs layers are successively grown on a semi-insulating GaAs substrate doped with Cr to form a semiconductor chip. Predetermined portions of those layers are selectively etched away to a depth reaching the substrate. Then a P type GaAlAs layer is epitaxially grown on the etched portions to restore the original shape of the chip. The chip is heated to form a pn junction in at least the GaAs layer serving as a light emitting region.

REFERENCES:
patent: 3961996 (1976-06-01), Namizaki
patent: 3990096 (1976-11-01), Namizaki
patent: 4065729 (1977-12-01), Gover

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