Semiconductor injection laser

Details Semiconductor injection laser Semiconductor injection laser

1974-05-22

1976-02-10

Edlow, Martin H.

357 16, 357 17, H01S 3300, H01L 29161

Patent

active

039381722

ABSTRACT:
A body of single crystalline semiconductor material having spaced opposed end surfaces which form a Fabry-Perot cavity. The body includes four contiguous regions of alternating conductivity type forming three PN junctions which extend between the end surfaces of the body. Along one of the PN junctions at least a portion of at least one of the regions is a recombination zone where light is generated upon the recombination of oppositely charged carriers when the PN junctions are forwardly biased to inject one type of charged carriers into the recombination zone. Along at least one side of the recombination zone is a zone having an index of refraction lower than the index of refraction of the recombination zone to confine light in the recombination zone. Also, along one side of the recombination zone is a zone which confines the injected charged carriers in the recombination zone.

REFERENCES:
patent: 3757174 (1973-09-01), Shigemasa
patent: 3855607 (1974-12-01), Kressel et al.

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