Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-12-01
1995-09-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257448, H01L 2348, H01L 2940
Patent
active
054499445
ABSTRACT:
A semiconductor image pickup device comprises a photo-sensing substrate and a signal processing substrate, wherein the photo-sensing substrate further comprises a plurality of detector elements, and the signal processing substrate comprises a plurality of input diodes, each detector element being operatively connected to the respective input diode. The detector elements are isolated and light shielded from each other and further from the signal processing substrate by a light shield layer, and each detector element has an input port for incident rays on an input side of the photo-sensing substrate and has a surface region on the opposite side for outputting a signal to the input diode. The light shield layer of the invention comprises an insulation multilayer and a metal layer laminated in this order from the input side of the incident rays. The embodiments utilize a silicon nitride layer and zinc sulphide layer as the insulation multilayer.
REFERENCES:
patent: 4972244 (1990-11-01), Buffer et al.
Hikida Soichiro
Sudo Gen
Crane Sara W.
Fujitsu Limited
Meier Stephen D.
LandOfFree
Semiconductor infrared image pickup device and method of fabrica does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor infrared image pickup device and method of fabrica, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor infrared image pickup device and method of fabrica will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-407425