Semiconductor infrared emitting device with oblique side surface

Details Semiconductor infrared emitting device with oblique side surface Semiconductor infrared emitting device with oblique side surface

1993-03-24

1994-09-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 95, 257 96, 257 97, 257 98, 257622, 257623, H01L 3300

Patent

active

053492110

ABSTRACT:
A semiconductor infrared emitting device is fabricated from an n-type gallium arsenide substrate, an n-type gallium arsenide layer on the top surface of the substrate, a p-type gallium arsenide layer formed on the n-type gallium arsenide layer for forming a p-n junction therebetween, and electrodes provided on the p-type gallium arsenide layer and the reverse surface of the substrate for applying a bias voltage to the p-n junction, and the side surface of the substrate declines from the cleavage surface of the gallium arsenide substrate so that the incident angle of infrared varies at the crystal surfaces, thereby allowing the infrared to be radiated from the semiconductor infrared emitting device.

REFERENCES:
patent: 3812516 (1974-05-01), Hayashi
patent: 4037241 (1977-07-01), Dierschke
patent: 5055894 (1991-10-01), Chan
Koga, "Solid-State Infrared Emitters-High-Power Ireds and Mode-Stabilized Laser Diode," Hitachi Review, vol. 27 (1978), No. 4, pp. 215-220.

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