Semiconductor indicating instrument

Details Semiconductor indicating instrument Semiconductor indicating instrument

1974-04-17

1976-09-21

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 29, 357 58, 357 63, 357 91, 148 15, H01L 3300

Patent

active

039822621

ABSTRACT:
A semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of opposite types of conductivity. The silicon carbide crystal also has an additional region with structure defects which are clusters with a concentration of 10.sup.19 cm.sup.-.sup.3 to 10.sup.22 cm.sup.-.sup.3, that region adjoining the second ohmic contact and having a thickness greater than that of the p-type region by at least 0.05 mu.

REFERENCES:
patent: 3629011 (1971-12-01), Tohi

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