Semiconductor indicating device and method for production of sam

Details Semiconductor indicating device and method for production of sam Semiconductor indicating device and method for production of sam

1975-12-29

1976-12-21

Edlow, Martin H.

357 63, 357 58, H01L 3300

Patent

active

039992063

ABSTRACT:
A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 .mu.m, the concentration of neutral atoms in the n-region is from 1.5.times.10.sup.18 to 5.times.10.sup.18 cm.sup.-.sup.3 and the thickness of the compensated region disposed between said two regions containing a luminescence activator, has a thickness of 0.5-1.2 .mu.m.
A method for production of a semiconductor digital display device whereby the p-n junction is formed by introducing an impurity which has a high surface concentration and a low diffusion coefficient in silicon carbide and then a luminescence activator is introduced from the same side to a depth exceeding by 3-4 times the diffusion depth.
The device features a high resistance of the diffused region adjoining the luminescence contacts.

REFERENCES:
patent: 3663722 (1972-05-01), Kamath
patent: 3742598 (1973-07-01), Nishida
patent: 3806774 (1974-04-01), Hartman
patent: 3829333 (1974-08-01), Tohi
patent: 3900864 (1975-08-01), Dapkus
patent: 3930912 (1976-01-01), Wisbey
patent: 3931631 (1976-01-01), Groves et al.

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