Semiconductor including signal processor and transient detector

Details Semiconductor including signal processor and transient detector Semiconductor including signal processor and transient detector

1985-05-06

1987-12-01

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200B, 307451, 307452, 307481, 307310, 365212, H03K 1716, H03K 1920

Patent

active

047106484

ABSTRACT:
Electric charge is supplied to a circuit node being in a charge storing state within a signal processor in response to a signal-processing commencing signal. The processor is operated in a low-temperature range, for example, in the range of temperature below 200K. By this structure, a leakage current is reduced, a high degree of integration equivalent to that of a dynamic circuit can be obtained, and the simplicity of a static circuit not requiring any complicated internal/external timing signals can be realized.

REFERENCES:
patent: 4405996 (1983-09-01), Stewart
patent: 4518872 (1985-05-01), Backes
patent: 4570091 (1986-02-01), Yasuda et al.
patent: 4591744 (1986-05-01), Koike
patent: 4614883 (1986-09-01), Sood et al.
Rees et al., "Low-Temperature FET for Low-Power High-Speed Logic", Electronics Letters, vol. 13, No. 6, Mar. 1977, pp. 156-158.

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