Semiconductor imaging device and fabrication process thereof

Details Semiconductor imaging device and fabrication process thereof Semiconductor imaging device and fabrication process thereof

2011-08-30

2011-08-30

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000

Reexamination Certificate

active

08008106

ABSTRACT:
A semiconductor imaging device includes a photodetection region formed of a diffusion region of a first conductivity type formed in an active region of a silicon substrate at a first side of a gate electrode such that a top part thereof is separated from a surface of the silicon substrate and such that an inner edge part invades underneath a channel region right underneath the gate electrode, a shielding layer formed of a second conductivity type at a surface of the silicon substrate at the first side of the gate electrode such that an inner edge part thereof is aligned with a sidewall surface of the gate electrode at the first side, a floating diffusion region formed in the active region at a second side of the gate electrode, and a channel region formed right underneath said gate electrode, wherein the channel region includes a first channel region part formed adjacent to the shielding layer and a second channel region part formed adjacent to the floating diffusion region, wherein the second channel region part contains an impurity element with a concentration level lower than the impurity concentration level of the first channel region part.

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