Semiconductor imaging device

Details Semiconductor imaging device Semiconductor imaging device

1986-07-08

1988-02-16

Davie, James W.

357 22, H01L 2714, H04N 314

Patent

active

047258730

ABSTRACT:
A semiconductor imaging device composed of a matrix of pixels, each pixel being implemented with a single static induction transistor. Each static induction transistor includes a pair of principal electrode regions disposed facing each other through a highly resistive channel region. First and second gate regions of the conduction type opposite that of the principal electrode regions is formed in contact with the channel region and used to control the current flow between the two principal electrode regions. A capacitor is formed on at least part of the first gate region, whereby carriers generated by light exitation are stored in the first gate region. The second gate region is formed surrounding the first gate region and is common to all pixels. This construction provides a high-level output signal and good isolation between pixels, with an attendant increase in blooming resistance.

REFERENCES:
patent: 4122483 (1978-10-01), Hulstrunk
patent: 4250519 (1981-02-01), Mogi et al.
patent: 4427990 (1984-01-01), Nishizawa

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