Semiconductor image sensor module, method for manufacturing...

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

Reexamination Certificate

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C257S737000, C257S444000, C257S738000

Reexamination Certificate

active

07626155

ABSTRACT:
A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained.A semiconductor image sensor module1at least includes a semiconductor image sensor chip2having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip3for processing image signals formed in the semiconductor image sensor chip2, wherein a plurality of bump electrodes15aare formed on a first main surface, a plurality of bump electrodes15bare formed on the image signal processing chip3, both the chips2and3are formed to be laminated through heat dissipating means4and the plurality of bump electrodes15aof the semiconductor image sensor chip2and the plurality of bump electrodes15bon the image signal processing chip3are electrically connected.

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Shibayama, Katsumi, Oct. 3, 2003, WO 03/077318.

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