Facsimile and static presentation processing – Facsimile – Recording apparatus
Patent
1983-08-16
1985-12-31
Rubinson, Gene Z.
Facsimile and static presentation processing
Facsimile
Recording apparatus
357 30, H01L 2714
Patent
active
045624747
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor image sensor which is characterized in that cells are each formed by using a static induction transistor as a light detecting and switching element.
A conventional semiconductor image sensor has each cell formed by a light detecting diode and a switching MOS transistor, and possesses the defect of low sensitivity because light detection is carried out by the diode. Since the MOS transistor is used for the switching operation, switching noise is larger than the signal of the light and removal of the noise is difficult. For the reason mentioned above, the use of the cell formed by the light detecting diode and the MOS transistor imposes limitations on the integration density from the viewpoint of sensitivity.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a semiconductor image sensor of the one cell-one transistor type which employs a static induction transistor of high photosensitivity for both light detection and switching operations.
Another object of the present invention is to provide a semiconductor image sensor which is suitable for miniaturization and for high integration density.
Another object of the present invention is to provide a semiconductor image sensor of a large light amplification factor.
Still another object of the present invention is to provide a semiconductor image sensor which permits high-speed readout.
In the semiconductor image sensor of the present invention, a matrix is formed by a plurality of row lines and a plurality of column lines and, at each intersection of the matrix, a static induction transistor is provided which has a first main electrode connected to one of the column lines and the other main electrode connected in common to the other main electrodes of the other static induction transistors, a channel region disposed between the main electrodes and a capacitor connected between a control region serving as a photocell and one of the row lines. The first main electrode of a respective switching transistor is connected to each one of the column lines and another main electrode of all these switching transistors are connected in common, and connected via a load resistor to a power source. The gate or base of each switching transistor is connected to a video line selecting circuit and the gate of each photocell is connected via the capacitor to a readout address circuit.
The semiconductor image sensor of the present invention has such features as follows:
(1) the semiconductor image sensor of the present invention has each photocell formed by one transistor and one capacitor, and hence is simple in construction; and
(2) the light amplifying action is large and resistant to noise.
Thus the semiconductor image sensor of the present invention is simple in construction, has a light amplifying action, possesses characterisitics unobtainable with conventional semiconductor devices, and hence is of great industrial value.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1(a) is a diagram showing a photocell for use in the semiconductor image sensor of the present invention;
FIG. 1(b) is a diagram explanatory of the construction of the semiconductor image sensor of the present invention;
FIGS. 1(c) and (d) are cross-sectional views of the principal parts of the photocells for use in the semiconductor image sensor of the present invention;
FIG. 1(e) is a diagram explanatory of the operation of the semiconductor image sensor of the present invention;
FIG. 1(f) is a graph showing an example of a dynamic characteristic of this invention device;
FIGS. 2(a) and (b) are cross-sectional views of the principal parts of photocell with a shielding gate;
FIG. 3(a) is a cross-sectional view of a photocell matrix in the semiconductor image sensor of the present invention in which a number of photo cells are arranged;
FIG. 3(b) is a top plan view of the photocell matrix;
FIGS. 3(c) and (d) are diagrams showing the arrangement of the semiconductor image sensor of the present invention which perf
REFERENCES:
patent: 4360821 (1982-11-01), Tsukada
patent: 4377817 (1983-03-01), Nishizawa
patent: 4388532 (1983-06-01), Garcia
patent: 4412236 (1983-10-01), Sasano
patent: 4450464 (1984-05-01), Nishizawa
patent: 4450466 (1984-05-01), Nishizawa
patent: 4454526 (1984-06-01), Nishizawa
patent: 4499654 (1985-02-01), Nishizawa
Nishizawa Jun-Ichi
Rubinson Gene Z.
Schroeder L. C.
LandOfFree
Semiconductor image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor image sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1027267