Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-12-29
2008-12-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S059000, C257S072000, C257S258000, C257S291000, C257S292000, C257S293000, C257S294000, C257S433000, C257S434000
Reexamination Certificate
active
07459729
ABSTRACT:
The present invention discloses a structure of package including: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die having micro lens area disposed within the die receiving through hole; a transparent cover covers the micro lens area; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure.
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Chang Jui-Hsien
Wang Tung-chuan
Yang Wen-Kun
Advanced Chip Engineering Technology Inc.
Muncy Geissler Olds & Lowe, PLLC
Soward Ida M
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