Semiconductor IGBT with improved turn-off switching time

Details Semiconductor IGBT with improved turn-off switching time Semiconductor IGBT with improved turn-off switching time

1990-01-18

1991-05-07

Hille, Rolf

357 36, 357 38, 357 39, H01L 2900, H01L 2972, H01L 2974, H01L 29747

Patent

active

050141015

ABSTRACT:
An insulated gate bipolar transistor comprises a body of semiconductor material having four layers of alternate conductivity-type disposed between emitter and collector electrodes and an insulated gate for establishing charge carrier flow to a base region of the device adjacent the emitter region, the device further comprising a conductive path enabling charge carriers to flow from the emitter region to the base region upon turn-off. As a result the device exhibits an improved speed of turn-off.

REFERENCES:
Modern Power Devices, B. Jayant Baliga, 1987.

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