Semiconductor IC device with polysilicon resistor

Details Semiconductor IC device with polysilicon resistor Semiconductor IC device with polysilicon resistor

1989-06-06

1990-08-14

Mintel, William

357 59, 357 34, 357 43, H01L 2702

Patent

active

049491539

ABSTRACT:
A semiconductor integrated circuit device includes: an active device, such as a bipolar transistor and a resistor formed of a first silicon layer formed on a thick insulating film on the semiconductor substrate. A metal silicide film is formed on the surface of said first silicon layer for connection between the first silicon layer and an interconnection layer. The interconnection layer has contact with a first and a second part of the metal silicide film formed on a opposited sides of an isulating film on first silicon layer. The part of the first silicon layer under the insulation film and between the first and second parts of the metal silicide film forms the resistor.

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