Semiconductor IC device having sense amplifier circuit

Details Semiconductor IC device having sense amplifier circuit Semiconductor IC device having sense amplifier circuit

1992-04-09

1994-04-05

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

365203, G11C 706

Patent

active

053008391

ABSTRACT:
A sense amplifier circuit is provided for sensing a very small signal includes two MOS transistors responsive to a differential voltage between first and second input signal lines to conduct a differential operation and switches respectively connected between drain regions and gate regions respectively of the two MOS transistors. Before the circuit senses and amplifies the signal, the switches are turned on to generate threshold voltages between the gate regions and the source regions respectively of the two transistors. Consequently, according to the variation in the threshold voltage between the respective transistors, a self-adjustment is achieved on bias voltages of the transistors before the signal amplification. The sense amplifier circuit resultantly develops its operation independent of the variation in the threshold voltage. One use for this sense amplifier circuit is to serve as a sense amplifier for a DRAM.

REFERENCES:
patent: 4604534 (1986-08-01), Pricer
patent: 4802130 (1989-01-01), Soneda
patent: 4943944 (1990-07-01), Sakui et al.
patent: 4973864 (1990-11-01), Nogami
patent: 5091885 (1992-03-01), Ohsawa
S. Suzuki et al.: "Threshold Difference Compensated Sense Amplifier", IEEE Journal of Solid-State Circuits, vol. SC-14, No. 6, Dec. 1979.

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