Semiconductor I.C. with protection against reversed power supply

Details Semiconductor I.C. with protection against reversed power supply Semiconductor I.C. with protection against reversed power supply

1974-05-06

1976-02-24

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307202R, 307296, 307303, 307317A, 357 15, 357 51, H01L 2704, H02H 720, H02H 318, H01L 2948

Patent

active

039407853

ABSTRACT:
A semiconductor integrated circuit includes an integrated resistor body of one conductivity type being contained in a lightly doped pocket of the opposite conductivity type. A metal contact is made to a surface portion of the lightly doped pocked forming a Schottky diode. The metal contact is connected to the hot (Vcd) power supply terminal and thus the diode is normally forward biased. When the power supply is inadvertently reversed, the Schottky diode is reverse biased and prevents destructive currents from flowing in a forward biased p-n isolation junction between the substrate and the pocket.

REFERENCES:
patent: 3541357 (1970-11-01), Kram
patent: 3562547 (1971-02-01), Brode
patent: 3649883 (1972-03-01), Augustine
patent: 3649887 (1972-03-01), Keller et al.
patent: 3737742 (1973-06-01), Breuer et al.
patent: 3829709 (1974-08-01), Maigret et al.

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