Semiconductor hybrid component

Details Semiconductor hybrid component Semiconductor hybrid component

1995-12-07

1998-03-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

257780, 257723, 257738, 257693, 257735, H01L 27146, H01L 2350, H01L 2348, H01L 2944

Patent

active

057265003

DESCRIPTION:

BRIEF SUMMARY
BACKGROUND OF THE INVENTION

1. Field of the Invention
The field of the invention is that of semiconductor components and especially, but not exclusively, that of infrared detectors.
2. Discussion of the Background
Currently, infrared detectors exist made of semiconductor materials such as III-V compounds (especially GaAs and InP), IV-VI compounds (such as PbTe) or II-VI compounds (such as HgCdTe) having very good detection performance characteristics. Nevertheless, these materials are not suitable for easily producing circuits for reading the detected photoelectric charges or circuits for processing the signals coming from this reading. Rather, these circuits must be produced from silicon, the technology of which is now well controlled and therefore inexpensive. This is why, both for infrared detectors and for other functions, there have been endeavours to develop mixed silicon/other semiconductor material devices.
In particular, attempts have been made to deposit gallium arsenide on a silicon substrate: the gallium-arsenide-based layers, deposited on a part of the silicon substrate, serve to form the active elements which cannot be produced with silicon; the rest of the substrate is used to produce silicon-based read and processing circuits. However, this solution, although conceivable for gallium arsenide, is difficult to implement and is not, moreover, suitable for other infrared detection materials such as HgCdTe or PbTe.
Another solution, currently widely used industrially, consists in making a hybrid arrangement combining an integrated component on a silicon substrate and an integrated component on a substrate of different material (GaAs, InP, HgCdTe or PbTe). In the case of infrared detectors, the hybridization technology most used consists in using as the main hybridization substrate a silicon substrate on which read and electronic processing circuits are integrated, and in bonding to this integrated circuit, face to face, a detection circuit formed on a substrate other than silicon and including the photosensitive elements. FIG. 1 shows such an arrangement in the conventional case of hybridization using indium balls. The detection circuit (substrate 10 of material such as GaAs for example) includes contact pads 12 connected to photosensitive elements 14; the silicon substrate 15 includes contact pads 16 connected to corresponding inputs of the read circuits formed on this substrate. The pads of both integrated components are arranged exactly facing each other and are bonded together by means of indium balls 18. The hybridization of the two substrates is therefore performed by bonding all the facing contact pads, this bonding establishing both mechanical connection of the two substrates and the electrical connection point by point between each of the photosensitive elements and their respective read circuits. The silicon substrate, the main substrate in the hybridization, moreover includes input/output contact pads 22 for connection with the outside.
Nevertheless, this hybridization technique has limits. The reason for this is that a large difference exists between the coefficients of thermal expansion of silicon and those of the other semiconductors. Now, whereas the hybridization is produced above room temperature, the active elements (infrared detector type) are intended to operate at very low temperatures (around 77 kelvin); moreover, indium is chosen for its great capacity to absorb the stresses which are produced on going from room temperature to the very low use temperature. However, even if the mechanical stresses are reduced, the differences in coefficient of expansion of the two substrates remain and mean that contact pads which are facing each other on the two substrates at a given temperature may no longer be so at another temperature. This is the case when contacts are very close together. This may cause short-circuits or other defects making correct operation .of the component impossible.
In order to avoid this problem, it is therefore necessary greatly to limit the dimensions of the

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