Semiconductor high-voltage devices

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with other solid-state active device in integrated...

Reexamination Certificate

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C257S142000, C257S147000, C257S329000

Reexamination Certificate

active

06936867

ABSTRACT:
A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n(or p)-layer containing a plurality of floating p (or n)-islands. The effect of the floating islands is to absorb a large part of the electric flux when the layer is fully depleted under high reverse bias voltage so as to the peak field is not increased when the doping concentration of voltage sustaining layer is increased. Therefore, the thickness and the specific on-resistance of the voltage sustaining layer for a given breakdown voltage can be much lower than those of a conventional voltage sustaining layer with the same breakdown voltage. By using the voltage sustaining layer of this invention, various high voltage devices can be made with better relation between specific on-resistance and breakdown voltage.

REFERENCES:
patent: 4868624 (1989-09-01), Grung et al.
patent: 5430311 (1995-07-01), Murakami et al.

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