Television – Camera – system and detail – Solid-state image sensor
Patent
1995-05-31
1998-09-22
Garber, Wendy
Television
Camera, system and detail
Solid-state image sensor
348162, 25037009, 378 988, H04N 314, G01J 102, H05G 164
Patent
active
058121919
ABSTRACT:
A semiconductor high-energy radiation imaging device having an array of pixel cells includes a semiconductor detector substrate and a semiconductor readout substrate. The semiconductor detector substrate includes an array of pixel detector cells, each of which directly generates charge in response to incident high-energy radiation. The semiconductor readout substrate includes an array of individually addressable pixel circuits, each of which is connected to a corresponding pixel detector cell to form a pixel cell. Each pixel circuit includes charge accumulation circuitry for accumulating charge directly resulting from high-energy radiation incident on a corresponding pixel detector cell, readout circuitry for reading the accumulated charge, and reset circuitry for resetting the charge accumulation circuitry. The charge accumulation circuitry has a charge storage capacity sufficient to store at least 1.8 million electrons for accumulating charge directly resulting from a plurality of successive high-energy radiation hits on the corresponding pixel dectector cell prior to readout or resetting of the charge accumulation circuitry.
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Orava Risto Olavi
Pyyhtia Jouni Ilari
Sarakinos Miltiadis Evangelos
Schulman Tom Gunnar
Spartiotis Konstantinos Evangelos
Garber Wendy
Simage Oy
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