Semiconductor heterostructures with SiGe material

Details Semiconductor heterostructures with SiGe material Semiconductor heterostructures with SiGe material

1988-12-23

1990-09-25

Jackson, Jr., Jerome

357 4, 357 61, H01L 29165

Patent

active

049596942

ABSTRACT:
A semiconductor device comprises a short-period superlattice of alternating monolayers of silicon and germanium grown on a 100 oriented SiGe substrate including 60-95% Ge. The silicon layers are M monolayers thick, and the germanium layers are N monolayers thick, where M=2(2m+1) for m.delta.0, 1 or 2 (preferably 0) and N=2(2n+1), n=1,2,3,4,5,6 etc. "Inhomogeneous" superlattices in which successive Ge layers have thicknesses N1, N2, N3 etc. (selected from the above N values) are disclosed.

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