Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Patent
1987-05-28
1989-08-29
Saba, William G.
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
148DIG25, 148DIG59, 148DIG67, 148DIG72, 148DIG169, 156610, 156612, 156DIG64, 156DIG67, 156DIG103, 357 16, 437106, 437110, 437131, H01L 29165, H01L 3106, H01L 21203
Patent
active
048613932
ABSTRACT:
A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.
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Bean John C.
Feldman Leonard C.
Fiory Anthony T.
American Telephone and Telegraph Company AT&T Bell Laboratories
Laumann Richard D.
Saba William G.
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