Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers

Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material

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148DIG25, 148DIG59, 148DIG67, 148DIG72, 148DIG169, 156610, 156612, 156DIG64, 156DIG67, 156DIG103, 357 16, 437106, 437110, 437131, H01L 29165, H01L 3106, H01L 21203

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active

048613932

ABSTRACT:
A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.

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