Semiconductor heterostructure radiation detector having two spec

Details Semiconductor heterostructure radiation detector having two spec Semiconductor heterostructure radiation detector having two spec

1998-04-17

2000-10-10

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 21, 257185, 257189, 257441, 257458, H01L 310304, H01L 31078, H01L 31109

Patent

active

061304662

ABSTRACT:
A semiconductor heterostructure radiation detector has two adjacent semicuctor layer regions sensitive in different spectral ranges, in which photons having different energies respectively can be absorbed, optically exciting charge carriers present therein. A photo current can be generated in the respective semiconductor layer regions in response to an external electric voltage applied via electrodes provided at the semiconductor heterostructure. One of the semiconductor regions is a photodiode, while the other is a quantum well intersubband photodetector.

REFERENCES:
patent: 5023685 (1991-06-01), Bethea
patent: 5329136 (1994-07-01), Goosen
patent: 5506418 (1996-04-01), Bois et al.
Schneider et al Appl. Phys. Lett. 68(13) "Voltage-Tunable . . . Structure", Mar. 25, 1996.

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