Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Patent
1993-08-09
1995-08-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
257 12, 257 18, 257 19, 257 20, 257 21, 257 22, 257 24, 257 27, 257 54, 257 55, 257183, 257190, 257192, H01L 29161, H01L 29205, H01L 29225
Patent
active
054422051
ABSTRACT:
A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Ge.sub.x Si.sub.1-x epitaxial layer overlain by a ungraded Ge.sub.x.sbsb.0 Si.sub.1-x.sbsb.0 intervening between the silicon substrate and the strained layer. Such a heterostructure can serve as a foundation for such devices as surface emitting LEDs, either n-channel or p-channel silicon-based MODFETs, and either n-channel or p-channel silicon-based MOSFETs.
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Brasen Daniel
Fitzgerald, Jr. Eugene A.
Green Martin L.
Monroe Donald P.
Silverman Paul J.
AT&T Corp.
Caplan David I.
Crane Sara W.
Tang Alice W.
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