Semiconductor heterostructure

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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136 89SJ, 357 20, 357 30, 357 90, H01L 2714, H01L 3106, H01L 29201

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041224760

ABSTRACT:
A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

REFERENCES:
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patent: 3960618 (1976-06-01), Kawamura et al.
H. J. Hovel et al., "Ga.sub.1-x Al.sub.x As-Gatts P-P-N Heterojunction Solar Cells" J. Electrochem. Soc., vol. 120, Sep. 1973, pp. 1246-1252.
J. A. Hutchby, "High-Efficiency Graded Band-Gap Al.sub.x Ga.sub.1-x As-GaAs Solar Cell", Applied Physics Letters, vol. 26, No. 8, Apr. 15, 1975, pp. 457-458.
L. W. James et al., "GaAs Concentrator Cell", Applied Physics Letters, vol. 26, No. 8, Apr. 15, 1975, pp. 467-470.
J. Ewan et al., "Large Area GaAlAs/GaAs Solar Cell Development" Conf. Record 11th IEEE Photospecialist Conference, May 6-8, 1975.
M. Konagai et al., "Graded-Band-Gap pGa.sub.1-x Al.sub.x As-nGaAs Heterojunction Solar Cells", J. of Applied Physics, vol. 46, No. 8, Aug. 1975, pp. 3542-3546.
H. J. Hovel et al., "Technique for Producing "Good" GaAs Solar Cells Using Poor-Quality Substrates", Applied Physics Letters, vol. 27, No. 8, Oct. 15, 1975, pp. 447-449.

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