Semiconductor heterojunction structure

Details Semiconductor heterojunction structure Semiconductor heterojunction structure

1994-10-20

1995-12-19

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437127, 437905, H01L 2120

Patent

active

054768128

ABSTRACT:
A semiconductor heterojunction structure comprising a p-type diamond layer and an n-type cubic boron nitride layer on a surface of said p-type diamond layer. Such heterojunction structure is useful for a semiconductor device such as a diode, a transistor, a laser and a rectifier, particularly an element which emits light from blue light to ultraviolet light.

REFERENCES:
patent: 3142595 (1964-07-01), Wentorf
patent: 4816291 (1989-03-01), Desphandey et al.
patent: 4863529 (1989-09-01), Imai et al.
patent: 4875967 (1989-10-01), Mishima et al.
patent: 4929986 (1990-05-01), Yoder
patent: 5030583 (1991-07-01), Beetz, Jr.
patent: 5043219 (1991-08-01), Yoshida et al.
patent: 5240877 (1993-08-01), Yoshida et al.
Warren E. Pickett, "Thin Superlattices and Band-Gap Discontinuities:The (110) Diamond-Boron Nitride Interface", Physical Review B, vol. 38, No. 2, Jul. 15, 1988, pp. 1316-1322.

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