Semiconductor heterojunction device made by an epitaxial growth

Details Semiconductor heterojunction device made by an epitaxial growth Semiconductor heterojunction device made by an epitaxial growth

1990-09-27

1992-03-03

Mintel, William

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 55, 372 48, 372 46, 372 45, 372 43, 437126, 437130, 359130, H01L 3300

Patent

active

050936964

ABSTRACT:
A semiconductor device is disclosed in which an area pattern is formed on a portion of a major surface of a semiconductor substrate over which epitaxial growth layers are formed. In this case, compound semiconductor areas formed by an epitaxial growth method, by the utilization of a surface temperature difference between the major surface of the semiconductor surface and the area pattern in a heating process. By so doing, it is possible to simultaneously obtain the compound semiconductors of a different composition or a different energy gap from each other.

REFERENCES:
patent: 4818722 (1989-04-01), Heinen
patent: 4843032 (1989-06-01), Tokuda et al.
patent: 4960730 (1990-10-01), Kakimoto
Kawakami et al, "GaAs Core Embedded in Al.sub.x Ga.sub.1-x As Matrix", Japan J. Appl. Phys., vol. 14 (1975), No. 3, pp. 409-411.

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