Semiconductor hetero-interface photodetector

Details Semiconductor hetero-interface photodetector Semiconductor hetero-interface photodetector

1997-02-18

2000-06-13

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 91, 438 94, 438455, H01L 2170

Patent

active

060748923

ABSTRACT:
By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.

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