Semiconductor hetero-interface photodetector

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257439, H01L 2714, H01L 3300

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06147391&

ABSTRACT:
A method of processing semiconductor films and layers, utilizing heterojunctions, to create a photodetector. Novel combinations of materials, such as silicon and indium gallium arsenide (InGaAs) are combined using wafer fusion techniques to create heterojunctions that cannot be created by any other growth methods. Devices responsive to different regions of the optical spectrum or that have higher efficiencies are created.

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