Semiconductor having large volume fraction of intermediate range

Details Semiconductor having large volume fraction of intermediate range Semiconductor having large volume fraction of intermediate range

1996-12-12

2000-07-11

Nguyen, Nam

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 423348, 423324, 423341, 423325, 423345, 423347, 427578, H01L 3100

Patent

active

060875801

ABSTRACT:
A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

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Xu et al., "Hydrogen . . .performance", International Conf. on Amorphous Semiconductors, Sep. 1995, pp. 61-64.

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