Semiconductor having enhanced acceptor activation

Details Semiconductor having enhanced acceptor activation Semiconductor having enhanced acceptor activation

1997-08-22

1999-08-03

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257 14, 257 15, 257 17, 257 22, 257 97, H01L 29205, H01L 310328, H01L 3300

Patent

active

059328991

ABSTRACT:
A semiconductor having enhanced acceptor activation is disclosed. The semiconductor comprises a ternary compound having a non-abruptly varying composition that is uniformly doped. The modulation of the chemical composition leads to a variation of the valence band energy. The modulation of the valence band results in a strong enhancement of the acceptor activation. A method for making a semiconductor having enhanced acceptor activation comprises two steps. They are (1) forming a ternary compound semiconductor having a non-abruptly varying composition, and (2) uniformly doping said semiconductor with a dopant. These two steps may be conducted simultaneously.

REFERENCES:
patent: 5298108 (1994-03-01), Miller
patent: 5679965 (1997-10-01), Schetzine

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