Semiconductor having diffusion region separated from the gap ele

Details Semiconductor having diffusion region separated from the gap ele Semiconductor having diffusion region separated from the gap ele

1992-05-20

1994-01-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437191, 148DIG20, H01L 21266

Patent

active

052799794

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of: forming a gate electrode and a wiring layer on a silicon oxide film formed on the surface of a semiconductor substrate, by using conductive material; forming a diffusion region on the surface of the semiconductor substrate by implanting impurities into the semiconductor substrate at an area other than the gate electrode and the wiring layer; and forming a film for electrically interconnecting the diffusion region and the wiring layer, using conductive material.

REFERENCES:
patent: 4658496 (1987-04-01), Beinvogl et al.
patent: 5064776 (1991-11-01), Roberts
patent: 5082796 (1992-01-01), El-Diwany et al.
patent: 5162259 (1992-10-01), Kolar et al.

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