Semiconductor having a substantially uniform layer of...

Stock material or miscellaneous articles – Composite – Of metal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C428S469000, C428S698000, C428S662000, C428S671000

Reexamination Certificate

active

10396341

ABSTRACT:
A method of electroplating metal onto a low conductivity layer combines a potential or current reversal waveform with variation in the amplitude and duration of the applied potential or current pulse. The method includes, over time, varying the duration of the pulse and continuously decreasing the amplitude of both the cathodic and anodic portions of the waveform across the surface of the low conductivity layer as the deposition zone moves from the center of the surface of the low conductivity layer to the outside edge. By virtue of the ability to vary the amplitude and duration of the pulse, the method facilitates the filling of structures in the center of the low conductivity layer without overdepositing on the outside edge, thus ensuring a controlled deposition of material across the surface of the low conductivity layer.

REFERENCES:
patent: 5972192 (1999-10-01), Dubin et al.
patent: 6071398 (2000-06-01), Martin et al.
patent: 6096648 (2000-08-01), Lopatin et al.
patent: 6197688 (2001-03-01), Simpson
patent: 6376374 (2002-04-01), Stevens
“Pulsed Electrodeposition of Copper Metallization from an Alkaline Bath,” Electrochemical Society Proceedings vol. 98-6, Krishnamoorthy et al., pp. 185-194, (1999).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor having a substantially uniform layer of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor having a substantially uniform layer of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor having a substantially uniform layer of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3944745

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.