Semiconductor Hall element

Details Semiconductor Hall element Semiconductor Hall element

1975-10-28

1977-06-07

Lynch, Michael J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307309, 357 56, H01L 2982

Patent

active

040287181

ABSTRACT:
A semiconductor Hall element consists of a substantially rectangular main island and at least one small island of semiconductor material, one conductivity type disposed in an epitaxial semiconductor layer grown on a single crystal semiconductor substrate of the opposite conductivity type. In the main island, a pair of highly doped elongated current terminal regions of the one conductivity type are disposed, so that they are near and substantially parallel to a pair of sides of the main island, which are opposite to each other. At least a highly doped Hall signal voltage terminal semiconductor region of the one conductivity type is disposed in the small island. The Hall signal voltage terminal region has a protrusion having a small cross section, the extremity of which is slightly beyond one side of the main island which is perpendicular to the current terminal regions.

REFERENCES:
patent: 3260980 (1966-07-01), Weiss
patent: 3823354 (1954-07-01), Janssen
Hollis, "Micro-electronic Magnetic Transducers," MEASUREMENT AND CONTROL, vol. 6, Jan. 1973, pp. 38-40.

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