Fishing – trapping – and vermin destroying
Patent
1990-03-06
1993-01-19
Wilczewski, Mary
Fishing, trapping, and vermin destroying
148DIG25, 148DIG57, 148DIG59, 148DIG160, 437126, 437137, H01L 2120, H01L 21205
Patent
active
051806843
ABSTRACT:
A semiconductor growth process wherein a plurality of layers, each consisting of a different king of semiconductor material, are grown, includes the steps of: heating a substrate to a first growth starting temperature at which a growth of a first semiconductor layer can be started, supplying a first material gas to the surface of the substrate to cause a growth of the first semiconductor layer, lowering the temperature of the substrate to below first growth starting temperature, and at the same time, stopping the supply of the first material gas, to stop the growth of the first semiconductor layer, heating the substrate to a second growth starting temperature at which a growth of a second semiconductor layer can be started, and supplying a second material gas to the surface of the substrate to cause a growth of the semiconductor layer.
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Fujitsu Limited
Wilczewski Mary
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